Electro-Optic detector (EOD) is intended for registration of the pulsed terahertz (THz) radiation. It is characterized by availability of integrated optics as well as built-in lock-in amplifier. The detector has the following functions: signal conditioning; automatic signal balance fine tuning on photo-detectors. Facility of mechanical delay circuit control by means of the proprietary software supplied with the EOD is envisaged. Application field of the device includes time-domain spectroscopy (TDS).
Built-in optics provides capability to integrate this detector into a finished measuring circuit (experimental circuit, etc). A lock-in amplifier provides high signal/noise ratio as well as makes the detector itself more compact and convenient when installing and operating. Signal conditioning function ensures invariance of the high signal/noise ratio and accurate measurement of time shape of THz impulse in case of power level fluctuations of the input signal and pumping laser.
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Model of the EOD |
EOD-NIR |
EOD-MIR |
|
EO optical pair crystal – photodiode |
ZnTe – Si |
CdTe – InGaAs |
|
Signal radiation wavelength, nm |
600–1100 |
1100–1700 |
|
Signal radiation spectral width(Full width at half maximum /FWHM/), nm |
11–20 |
|
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Spectral sensitivity, THz |
0.1–4 |
|
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Signal radiation impulse duration, fs |
<120 |
|
|
Signal-carrying beam power, mW |
1–20 |
|
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Minimal required power of THz radiation, nW |
1 |
|
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Lock-in amplifier modulation frequency, Hz |
15–250000 |
|
|
Lock-in amplifier gain |
100–30000 |
|
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Lock-in amplifier time constant, s |
0.003–10 |
|
|
Operating temperature, °C |
5–45 |
|
|
Storage temperature, °C |
0–60 |
|
|
Air humidity, % |
5–85 |
|
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Voltage, V |
110 / 220 |
|
|
Frequency, Hz |
50 |
|
|
Power consumption, W |
18 |
|
|
EOD overall dimensions (L×W×H), mm |
268.0×82.0×42.5 |
|
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Weight, kg |
0.8 |
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THz Impulse Radiation Electro-Optical Detector
